![]() ![]() ![]() In addition, an inverse correlation was found between μ FE and D it. s and the minimum D it of 1 × 10 13 cm −2.Using the n-type body with the lowest N P of 2 × 10 15 cm −3, the maximum μ FE of 20 cm 2/V For decreased N P in the n-type body, μ FE was increased, while D it was decreased. In this study, we fabricated inversion channel diamond MOSFETs using n-type bodies with various N P values. However, the influences of device design parameters, such as N P in an n-type body and the oxide layer material, on the electrical characteristics of inversion channel diamond MOSFETs have not yet been reported. The inversion channel diamond MOSFETs are potentially applicable in high-frequency, high-current, and high-voltage devices because of the material's excellent properties such as a wide bandgap, high breakdown electric field, high carrier mobility, and high thermal conductivity. We investigated the phosphorus concentration ( N P) dependence of the field-effect mobility μ FE and interface state density D it in inversion channel diamond metal-oxide-semiconductor field-effect transistors (MOSFETs). ![]()
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